so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 KI1553DL absolute maximum ratings t a =25 5 secs steady state 5 secs steady state drain-source voltage v ds v gate-source voltage v gs v continuous drain current (t j = 150 )* t a =25 0.7 0.66 0.44 0.41 a t a =85 0.5 0.48 0.31 0.3 a pulsed drain current i dm a continuous source current (diode conduction)a i s 0.25 0.23 -0.25 -0.23 a maximum power dissipation* t a =25 0.3 0.27 0.3 0.27 w t a =85 0.16 0.14 0.16 0.14 w operating junction and storage temperature range t j ,t stg *surface mounted on 1" x 1" fr4 board. -55to150 i d p d n-channel p-channel symbol 12 1.0 parameter unit 20 -20 thermal resistance ratings t a =25 symbol typical maximum unit t 5sec 360 415 steady state 400 460 maximum junction-to-foot (drain) steady state r thjf 300 350 *surface mounted on 1" x 1" fr4 board. parameter maximum junction-to-ambient* r thja /w pin configuration smd type ic smd type transistors smd type smd type mosfet smd type smd type mosfet smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
electrical characteristics t j =25 parameter symbol min typ max unit v ds =v gs ,i d =250 a n-ch 0.6 v ds =v gs ,i d =-250 a p-ch -0.6 n-ch 100 p-ch 100 v ds =16v,v gs =0v n-ch 1 v ds =-16v,v gs =0v p-ch -1 v ds =16v,v gs =0v,t j =85 n-ch 5 v ds =-16v,v gs =0v,t j =85 p-ch -5 v ds 5v,v gs =4.5v n-ch 0.6 v ds -5 v, v gs =-4.5v p-ch -1.0 v gs =4.5v,i d = 0.66a n-ch 0.320 0.385 v gs =-4.5v,i d = -0.41a p-ch 0.850 0.995 v gs =2.5v,i d = 0.40a n-ch 0.560 0.630 v gs =-2.5v,i d = -0.25a p-ch 1.4 1.800 v ds =10v,i d = 0.66a n-ch 1.5 v ds =-10v,i d = - 0.41a p-ch 0.8 i s =0.23a,v gs =0v n-ch 0.8 1.2 i s = -0.23a, v gs = 0 v p-ch -0.8 -1.2 n-channel n-ch 0.8 1.2 v ds =10v,v gs =4.5v,i d = 0.66a p-ch 1.2 1.8 n-ch 0.06 p-channel p-ch 0.45 v ds =-10v,v gs =-4.5v,i d =- 0.41a n-ch 0.30 p-ch 0.25 n channel n-ch 10 20 v dd =10v,r l =20 p-ch 7.5 15 i d =0.5a,v gen =4.5v,r g =6 n-ch 16 30 p-ch 20 40 p-channel n-ch 10 20 v dd =-10v,r l =20 p-ch 8.5 17 i d =-0.5a,v gen =-4.5v,r g =6 n-ch 10 20 p-ch 12 24 i f =0.23a,d i /d t =100a/ s n-ch 20 40 i f = -0.23 a, d i /d t =100a/ s p-ch 25 40 * pulse test; pulse width 300 s, duty cycle 2%. rise time turn off delay time diode forward voltage* total gate charge gate source charge gate drain charge gate threshold voltage gate body leakage zero gate voltage drain current on state drain currenta v sd q g q gs q gd drainsourceonstateresistance* r ds(on) i d(on) g fs forward transconductance* i dss v ds =0vv gs = 12v testconditons v na a v gs( th) i gss a ms v pc source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f fall time turn on time KI1553DL smd type ic smd type transistors smd type smd type mosfet smd type smd type mosfet smd type smd type product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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